auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR9010TRPBF Vishay
Description: MOSFET P-CH 50V 5.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Weitere Produktangebote IRFR9010TRPBF nach Preis ab 0.49 EUR bis 2.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRFR9010TRPBF | Hersteller : Vishay |
 Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IRFR9010TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IRFR9010TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IRFR9010TRPBF | Hersteller : Vishay Semiconductors |
MOSFET 50V P-CH HEXFET MOSFET D |
auf Bestellung 2000 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
IRFR9010TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 50V 5.3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
auf Bestellung 1308 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
IRFR9010TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IRFR9010TRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
IRFR9010TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 50V 5.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IRFR9010TRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |