IRFR9210TRPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 200V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.27 EUR |
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Technische Details IRFR9210TRPBF Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFR9210TRPBF nach Preis ab 1.08 EUR bis 3.09 EUR
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IRFR9210TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9210TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9210TRPBF | Hersteller : Vishay Semiconductors |
MOSFET 200V P-CH HEXFET MOSFET D |
auf Bestellung 269 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFR9210TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 1.9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 3741 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR9210TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR9210TRPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR9210TRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.2A Pulsed drain current: -7.6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 8.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IRFR9210TRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.2A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.2A Pulsed drain current: -7.6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 8.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |