IRG4RC10UDPBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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Technische Details IRG4RC10UDPBF INFINEON TECHNOLOGIES
Description: IGBT 600V 8.5A 38W DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A, Supplier Device Package: D-Pak, Td (on/off) @ 25°C: 40ns/87ns, Switching Energy: 140µJ (on), 120µJ (off), Test Condition: 480V, 5A, 100Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 8.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 34 A, Power - Max: 38 W.
Weitere Produktangebote IRG4RC10UDPBF
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IRG4RC10UDPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 8.5A 38W DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: D-Pak Td (on/off) @ 25°C: 40ns/87ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 8.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 34 A Power - Max: 38 W |
Produkt ist nicht verfügbar |
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IRG4RC10UDPBF | Hersteller : Infineon Technologies |
IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT |
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IRG4RC10UDPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |