IRG4RC10UDPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT 600V 8.5A 38W DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
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Technische Details IRG4RC10UDPBF Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A, Supplier Device Package: D-Pak, Td (on/off) @ 25°C: 40ns/87ns, Switching Energy: 140µJ (on), 120µJ (off), Test Condition: 480V, 5A, 100Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 8.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 34 A, Power - Max: 38 W.
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IRG4RC10UDPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode |
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