Technische Details IRGS10B60KDTRRP Infineon / IR
Description: IGBT 600V 22A 156W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A, Supplier Device Package: D2PAK, IGBT Type: NPT, Td (on/off) @ 25°C: 30ns/230ns, Switching Energy: 140µJ (on), 250µJ (off), Test Condition: 400V, 10A, 47Ohm, 15V, Gate Charge: 38 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 44 A, Power - Max: 156 W.
Weitere Produktangebote IRGS10B60KDTRRP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRGS10B60KDTRRP | Hersteller : Infineon |
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auf Bestellung 104000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRGS10B60KDTRRP | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 22A 156000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRGS10B60KDTRRP | Hersteller : Infineon Technologies |
Description: IGBT 600V 22A 156W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 30ns/230ns Switching Energy: 140µJ (on), 250µJ (off) Test Condition: 400V, 10A, 47Ohm, 15V Gate Charge: 38 nC Part Status: Obsolete Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 44 A Power - Max: 156 W |
Produkt ist nicht verfügbar |