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Technische Details IRGS10B60KDTRRP Infineon / IR
Description: IGBT 600V 22A 156W D2PAK, Power - Max: 156 W, Current - Collector Pulsed (Icm): 44 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 22 A, Part Status: Obsolete, Gate Charge: 38 nC, Test Condition: 400V, 10A, 47Ohm, 15V, Switching Energy: 140µJ (on), 250µJ (off), Td (on/off) @ 25°C: 30ns/230ns, IGBT Type: NPT, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A, Reverse Recovery Time (trr): 90 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRGS10B60KDTRRP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IRGS10B60KDTRRP | Infineon Technologies |
 Description: IGBT 600V 22A 156W D2PAKPower - Max: 156 W Current - Collector Pulsed (Icm): 44 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 22 A Part Status: Obsolete Gate Charge: 38 nC Test Condition: 400V, 10A, 47Ohm, 15V Switching Energy: 140µJ (on), 250µJ (off) Td (on/off) @ 25°C: 30ns/230ns IGBT Type: NPT Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Reverse Recovery Time (trr): 90 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRGS10B60KDTRRP | Infineon Technologies |
Trans IGBT Chip N-CH 600V 22A 156000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRGS10B60KDTRRP |
|
Hersteller: Infineon Technologies
Description: IGBT 600V 22A 156W D2PAK
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 600V 22A 156W D2PAK
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGS10B60KDTRRP |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 22A 156000mW 3-Pin(2+Tab) D2PAK T/R
Trans IGBT Chip N-CH 600V 22A 156000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH