auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.04 EUR |
| 1600+ | 1.8 EUR |
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Technische Details IRL640STRLPBF Vishay
Description: MOSFET N-CH 200V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote IRL640STRLPBF nach Preis ab 1.12 EUR bis 5.3 EUR
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IRL640STRLPBF | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 125W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 796 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL640STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 125W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET |
auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL640STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) |
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IRL640STRLPBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 200V 17 Amp |
auf Bestellung 1463 Stücke: Lieferzeit 14-28 Tag (e) |
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IRL640STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 5476 Stücke: Lieferzeit 21-28 Tag (e) |
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IRL640STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRL640STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRL640STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |