| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.59 EUR |
| 10+ | 4.16 EUR |
| 100+ | 3.5 EUR |
| 500+ | 2.73 EUR |
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Technische Details IRL640STRLPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote IRL640STRLPBF nach Preis ab 85.08 EUR bis 85.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
|
IRL640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IRL640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |



