IRLR130ATM Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 13A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6.5A, 5V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Description: MOSFET N-CH 100V 13A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6.5A, 5V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
auf Bestellung 21550 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
370+ | 1.94 EUR |
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Technische Details IRLR130ATM Fairchild Semiconductor
Description: MOSFET N-CH 100V 13A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 6.5A, 5V, Power Dissipation (Max): 2.5W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V.
Weitere Produktangebote IRLR130ATM
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRLR130ATM | Hersteller : ONSEMI |
Description: ONSEMI - IRLR130ATM - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 21550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR130ATM | Hersteller : onsemi / Fairchild | MOSFET 100V N-Channel a-FET Logic Level |
Produkt ist nicht verfügbar |