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JAN2N6788 HARRIS


8974-lds-0164-datasheet Hersteller: HARRIS

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Technische Details JAN2N6788 HARRIS

Description: MOSFET N-CH 100V 6A TO39, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-39, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V.

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JAN2N6788 JAN2N6788 Hersteller : Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
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