JAN2N6798

JAN2N6798

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2100 Stücke

Technische Details JAN2N6798

Description: MOSFET N-CH TO-205AF TO-39, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Supplier Device Package: TO-39, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 800mW (Ta), 25W (Tc).

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JAN2N6798
Hersteller: HAR

2100 Stücke
JAN2N6798
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-205AF TO-39
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
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