JAN2N6798
JAN2N6798
Hersteller:
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2100 Stücke
2100 Stücke
Technische Details JAN2N6798
Description: MOSFET N-CH TO-205AF TO-39, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Supplier Device Package: TO-39, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 800mW (Ta), 25W (Tc).
Preis JAN2N6798 ab 0 EUR bis 0 EUR
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JAN2N6798 Hersteller: HAR |
2100 Stücke |
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JAN2N6798 Hersteller: Microsemi Corporation Description: MOSFET N-CH TO-205AF TO-39 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Package / Case: TO-205AF Metal Can Supplier Device Package: TO-39 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 25W (Tc) |
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