JANS2N3501

JANS2N3501 Microchip / Microsemi


lds_0276-1592753.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 38 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+153.35 EUR
100+ 142.43 EUR
500+ 142.4 EUR
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Technische Details JANS2N3501 Microchip / Microsemi

Description: TRANS NPN 150V 0.3A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Grade: Military, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/366.

Weitere Produktangebote JANS2N3501

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JANS2N3501 JANS2N3501 Hersteller : Microchip Technology lds-0056.pdf Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Tray
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JANS2N3501 JANS2N3501 Hersteller : Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar