Technische Details JANS2N3501 Microchip / Microsemi
Description: TRANS NPN 150V 0.3A TO39, Qualification: MIL-PRF-19500/366, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 300 mA, Grade: Military, Supplier Device Package: TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JANS2N3501
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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JANS2N3501 | Microchip Technology |
Description: TRANS NPN 150V 0.3A TO39Qualification: MIL-PRF-19500/366 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 300 mA Grade: Military Supplier Device Package: TO-39 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANS2N3501 |
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Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Qualification: MIL-PRF-19500/366
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 150V 0.3A TO39
Qualification: MIL-PRF-19500/366
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH


