JAN2N2905

JAN2N2905 Microchip / Microsemi


LDS_0186-1592789.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 75 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+93.21 EUR
10+ 93.18 EUR
25+ 93.13 EUR
100+ 86.53 EUR
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Technische Details JAN2N2905 Microchip / Microsemi

Description: TRANS PNP 40V 0.6A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/290.

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JAN2N2905 JAN2N2905 Hersteller : Microchip Technology 122694-lds-0186-datasheet Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
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