MBR200100CTS GeneSiC Semiconductor
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Technische Details MBR200100CTS GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A SOT227, Packaging: Tube, Package / Case: SOT-227-4, Mounting Type: Screw Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A, Current - Reverse Leakage @ Vr: 10 µA @ 80 V.
Weitere Produktangebote MBR200100CTS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR200100CTS | Hersteller : GeneSiC Semiconductor |
 Rectifier Diode Schottky 100V 200A 4-Pin SOT-227 |
Produkt ist nicht verfügbar |
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MBR200100CTS | Hersteller : GeneSiC Semiconductor |
Rectifier Diode Schottky 100V 200A 4-Pin SOT-227 |
Produkt ist nicht verfügbar |
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MBR200100CTS | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A SOT227 Packaging: Tube Package / Case: SOT-227-4 Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 80 V |
Produkt ist nicht verfügbar |