MBR500100CT GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorSchottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R
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Technische Details MBR500100CT GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 250A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 250A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
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MBR500100CT | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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