MBR50035CT GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Technische Details MBR50035CT GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 250A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 250A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote MBR50035CT
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Preis ohne MwSt |
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MBR50035CT | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R |
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