Technische Details MBR600200CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A, Current - Reverse Leakage @ Vr: 3 mA @ 200 V.
Weitere Produktangebote MBR600200CTR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR600200CTR | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
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MBR600200CTR | Hersteller : GeneSiC Semiconductor | Diode Modules 150V 600A Reverse |
Produkt ist nicht verfügbar |