MJD32T4G onsemi
Hersteller: onsemiDescription: TRANS PNP 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.98 EUR |
| 5000+ | 0.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MJD32T4G onsemi
Description: TRANS PNP 40V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD32T4G nach Preis ab 0.81 EUR bis 2.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MJD32T4G | Hersteller : onsemi |
Bipolar Transistors - BJT 3A 40V 15W PNP |
auf Bestellung 44 Stücke: Lieferzeit 308-322 Tag (e) |
|
||||||||||||||
|
|
MJD32T4G | Hersteller : onsemi |
Description: TRANS PNP 40V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.56 W |
auf Bestellung 10737 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
 |
MJD32T4G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
MJD32T4G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
MJD32T4G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
MJD32T4G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
MJD32T4G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |