MSCSM120AM11CT3AG Microchip Technology
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details MSCSM120AM11CT3AG Microchip Technology
Description: SIC 2N-CH 1200V 254A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.067kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 254A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA, Supplier Device Package: SP3F.
Weitere Produktangebote MSCSM120AM11CT3AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MSCSM120AM11CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
MSCSM120AM11CT3AG | Hersteller : Microchip Technology |
Description: SIC 2N-CH 1200V 254A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.067kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP3F |
Produkt ist nicht verfügbar |
|
 |
MSCSM120AM11CT3AG | Hersteller : Microchip / Microsemi |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
Produkt ist nicht verfügbar |
|
| MSCSM120AM11CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |