MSCSM120AM11CT3AG Microchip Technology

Description: SIC 2N-CH 1200V 254A SP3F, Supplier Device Package: SP3F, Vgs(th) (Max) @ Id: 2.8V @ 3mA, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 254A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1.067kW (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube.