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MUN5135DW1T1G

MUN5135DW1T1G onsemi


dta123jd-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 39000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
6000+ 0.12 EUR
9000+ 0.099 EUR
30000+ 0.097 EUR
Mindestbestellmenge: 3000
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Technische Details MUN5135DW1T1G onsemi

Description: TRANS PREBIAS 2PNP 50V SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.

Weitere Produktangebote MUN5135DW1T1G nach Preis ab 0.15 EUR bis 0.78 EUR

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MUN5135DW1T1G MUN5135DW1T1G Hersteller : onsemi DTA123JD_D-1387451.pdf Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
auf Bestellung 43229 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
91+ 0.57 EUR
171+ 0.3 EUR
500+ 0.21 EUR
Mindestbestellmenge: 75
MUN5135DW1T1G MUN5135DW1T1G Hersteller : onsemi dta123jd-d.pdf Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 45184 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
50+ 0.53 EUR
102+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 34
MUN5135DW1T1G (SOT363, ON) 2хТранзистора MUN5135DW1T1G (SOT363, ON) 2хТранзистора
Produktcode: 153435
Hersteller : ON dta123jd-d.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-363
U, V: 50 V
U, V: 50 V
I, А: 0,1 A
Produkt ist nicht verfügbar
MUN5135DW1T1G MUN5135DW1T1G Hersteller : ONSEMI MUN5135DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
MUN5135DW1T1G MUN5135DW1T1G Hersteller : ONSEMI MUN5135DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Produkt ist nicht verfügbar