MUR20005CT GeneSiC Semiconductor
auf Bestellung 25 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details MUR20005CT GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 100A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Weitere Produktangebote MUR20005CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MUR20005+CT |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MUR20005CT |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MUR20005CT | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
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