MUR20020CTR
Technische Details MUR20020CTR
Description: DIODE MODULE 200V 200A 2TOWER, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Anode, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Diode Type: Schottky, Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Preis MUR20020CTR ab 0 EUR bis 0 EUR
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MUR20020CTR Hersteller: 
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200 Stücke |
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 Hersteller: GeneSiC Semiconductor Discrete Semiconductor Modules 200V 200A Super Fast Recovery
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MUR20020CTR Hersteller: GeneSiC Semiconductor Description: DIODE MODULE 200V 200A 2TOWER Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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