auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 220.54 EUR |
| 5+ | 171.65 EUR |
| 10+ | 160.18 EUR |
| 20+ | 149.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUR20020CTR Navitas Semiconductor
Description: DIODE MODULE GP 200V 100A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Weitere Produktangebote MUR20020CTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MUR20020CTR | Hersteller : MOTOROLA |
 |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
||
| MUR20020CTR | Hersteller : GeneSiC Semiconductor |
Rectifier Diode Switching 200V 200A 75ns 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
||
| MUR20020CTR | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
||
 |
MUR20020CTR | Hersteller : GeneSiC Semiconductor |
Diode Modules 200V 200A Super Fast Recovery |
Produkt ist nicht verfügbar |