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NHDTC114ETR

NHDTC114ETR Nexperia USA Inc.


NHDTC114_124_144ET_SER.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.086 EUR
6000+ 0.08 EUR
9000+ 0.066 EUR
30000+ 0.065 EUR
Mindestbestellmenge: 3000
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Technische Details NHDTC114ETR Nexperia USA Inc.

Description: TRANS PREBIAS NPN 80V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 250 mW, Frequency - Transition: 170 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NHDTC114ETR nach Preis ab 0.06 EUR bis 0.51 EUR

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Preis ohne MwSt
NHDTC114ETR NHDTC114ETR Hersteller : Nexperia USA Inc. NHDTC114_124_144ET_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33506 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
75+ 0.35 EUR
153+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 53
NHDTC114ETR NHDTC114ETR Hersteller : Nexperia NHDTC114_124_144ET_SER-1880102.pdf Digital Transistors NHDTC114ET/SOT23/TO-236AB
auf Bestellung 6744 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
103+0.51 EUR
148+ 0.35 EUR
358+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.086 EUR
9000+ 0.073 EUR
24000+ 0.06 EUR
Mindestbestellmenge: 103
NHDTC114ETR Hersteller : NEXPERIA nhdtc114_124_144et_ser.pdf Trans Digital BJT NPN 80V 100mA 350mW Automotive 3-Pin SOT-23 T/R
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)