NTE2987 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 80A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 80A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.88 EUR |
17+ | 4.39 EUR |
21+ | 3.53 EUR |
22+ | 3.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2987 NTE Electronics
Description: MOSFET N-CH 100V 20A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 120mOhm @ 10A, 5V, FET Feature: Logic Level Gate, 4V Drive, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.
Weitere Produktangebote NTE2987 nach Preis ab 3.35 EUR bis 21.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTE2987 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 80A; 105W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Pulsed drain current: 80A Power dissipation: 105W Case: TO220 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: THT Kind of channel: enhanced |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
NTE2987 | Hersteller : NTE Electronics, Inc |
Description: MOSFET N-CH 100V 20A TO220 Packaging: Bag Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 120mOhm @ 10A, 5V FET Feature: Logic Level Gate, 4V Drive Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
auf Bestellung 171 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
NTE2987 | Hersteller : NTE Electronics, Inc. | Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220 |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
NTE2987 | Hersteller : NTE Electronics, Inc. | Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220 |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
NTE2987 | Hersteller : NTE Electronics, Inc. | Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220 |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |