NTE4911 NTE Electronics
Hersteller: NTE ElectronicsCategory: Bidirectional THT transil diodes
Description: Diode: TVS; 10V; 103A; bidirectional; Ø9,52x5,21mm; 1.5kW
Mounting: THT
Case: Ø9,52x5,21mm
Max. off-state voltage: 8.55V
Semiconductor structure: bidirectional
Max. forward impulse current: 103A
Breakdown voltage: 10V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE4911 NTE Electronics
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 10V; 103A; bidirectional; Ø9,52x5,21mm; 1.5kW, Mounting: THT, Case: Ø9,52x5,21mm, Max. off-state voltage: 8.55V, Semiconductor structure: bidirectional, Max. forward impulse current: 103A, Breakdown voltage: 10V, Leakage current: 10µA, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4911
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE4911 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 10V; 103A; bidirectional; Ø9,52x5,21mm; 1.5kW Mounting: THT Case: Ø9,52x5,21mm Max. off-state voltage: 8.55V Semiconductor structure: bidirectional Max. forward impulse current: 103A Breakdown voltage: 10V Leakage current: 10µA Type of diode: TVS Peak pulse power dissipation: 1.5kW |
Produkt ist nicht verfügbar |