NTE4911 NTE Electronics
Hersteller: NTE ElectronicsCategory: Bidirectional THT transil diodes
Description: Diode: TVS; 10V; 103A; bidirectional; Ø9,52x5,21mm; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE4911 NTE Electronics
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 10V; 103A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 8.55V, Breakdown voltage: 10V, Max. forward impulse current: 103A, Semiconductor structure: bidirectional, Case: Ø9,52x5,21mm, Mounting: THT, Leakage current: 10µA, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE4911 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 10V; 103A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 10µA |
Produkt ist nicht verfügbar |