NTMFS4C09NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.99 EUR |
3000+ | 0.93 EUR |
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Technische Details NTMFS4C09NT1G onsemi
Description: MOSFET N-CH 30V 9A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Power Dissipation (Max): 760mW (Ta), 25.5W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V.
Weitere Produktangebote NTMFS4C09NT1G nach Preis ab 0.89 EUR bis 2.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTMFS4C09NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 9A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
auf Bestellung 5428 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS4C09NT1G | Hersteller : onsemi | MOSFET Power MOSFET 30V 52A 5.8 mOhm Single N-Channel S0-8FL |
auf Bestellung 1359 Stücke: Lieferzeit 14-28 Tag (e) |
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NTMFS4C09NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTMFS4C09NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 52 A, 0.0046 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 25.5W Anzahl der Pins: 5Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0046ohm |
auf Bestellung 1957 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C09NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTMFS4C09NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 52 A, 0.0046 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 25.5W Anzahl der Pins: 5Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0046ohm |
auf Bestellung 1957 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C09NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTMFS4C09NT1G - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 8500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C09NT1G | Hersteller : ON Semiconductor |
auf Bestellung 695 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS4C09NT1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 16.4A 5-Pin SO-FL EP T/R |
Produkt ist nicht verfügbar |
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NTMFS4C09NT1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 16.4A 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |