Technische Details NTP8G202NG ON Semiconductor
Description: GANFET N-CH 600V 9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 500µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 8V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.
Weitere Produktangebote NTP8G202NG
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NTP8G202NG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH GaN 600V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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NTP8G202NG | Hersteller : onsemi |
Description: GANFET N-CH 600V 9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
Produkt ist nicht verfügbar |