NTP8G202NG ON Semiconductor

Description: GANFET N-CH 600V 9A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 8V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.6V @ 500µA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: GaNFET (Cascode Gallium Nitride FET), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.