PBSS5580PA,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 4A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 420mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
Frequency - Transition: 110MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.1 W
Description: TRANS PNP 80V 4A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 420mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
Frequency - Transition: 110MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.1 W
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.33 EUR |
Produktrezensionen
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Technische Details PBSS5580PA,115 Nexperia USA Inc.
Description: TRANS PNP 80V 4A 3HUSON, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 420mV @ 200mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V, Frequency - Transition: 110MHz, Supplier Device Package: 3-HUSON (2x2), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2.1 W.
Weitere Produktangebote PBSS5580PA,115 nach Preis ab 0.29 EUR bis 1.28 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PBSS5580PA,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 80V 4A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 420mV @ 200mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V Frequency - Transition: 110MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2.1 W |
auf Bestellung 10557 Stücke: Lieferzeit 21-28 Tag (e) |
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PBSS5580PA,115 | Hersteller : Nexperia | Bipolar Transistors - BJT PBSS5580PA/SOT1061/HUSON3 |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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PBSS5580PA,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS5580PA,115 - Bipolarer Einzeltransistor (BJT), PNP, 80 V, 4 A, 500 mW, HUSON, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 4A usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 80V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 110MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5580PA,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS5580PA,115 - Bipolarer Einzeltransistor (BJT), PNP, 80 V, 4 A, 500 mW, HUSON, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 4A usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 80V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 110MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5580PA,115 | Hersteller : NEXPERIA | Trans GP BJT PNP 80V 4A 2100mW 3-Pin HUSON T/R |
Produkt ist nicht verfügbar |
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PBSS5580PA,115 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061 Mounting: SMD Case: DFN2020-3; SOT1061 Kind of package: reel; tape Frequency: 110MHz Collector current: 4A Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Current gain: 70...265 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PBSS5580PA,115 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061 Mounting: SMD Case: DFN2020-3; SOT1061 Kind of package: reel; tape Frequency: 110MHz Collector current: 4A Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Current gain: 70...265 |
Produkt ist nicht verfügbar |