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PBSS8110TVL

PBSS8110TVL Nexperia USA Inc.


PBSS8110T.pdf Hersteller: Nexperia USA Inc.
Description: PBSS8110T/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
auf Bestellung 8835 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
33+ 0.8 EUR
100+ 0.4 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 24
Produktrezensionen
Produktbewertung abgeben

Technische Details PBSS8110TVL Nexperia USA Inc.

Description: PBSS8110T/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V.

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Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 1V
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