PBSS8110TVL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: TRANS NPN 100V 1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
auf Bestellung 8565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.30 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.20 EUR |
| 2000+ | 0.18 EUR |
| 5000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS8110TVL Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V.
Weitere Produktangebote PBSS8110TVL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PBSS8110TVL | Hersteller : Nexperia |
Trans GP BJT NPN 100V 1A 480mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|
 |
PBSS8110TVL | Hersteller : NEXPERIA |
100 V, 1 A NPN Low Vcesat (Biss) Transistor |
Produkt ist nicht verfügbar |
|
|
|
PBSS8110TVL | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 100V 1A TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V |
Produkt ist nicht verfügbar |
|
 |
PBSS8110TVL | Hersteller : Nexperia |
Bipolar Transistors - BJT PBSS8110T/SOT23/TO-236AB |
Produkt ist nicht verfügbar |