PDTA115EE,115

PDTA115EE,115

PDTA115EE,115

Hersteller: NEXPERIA
Trans Digital BJT PNP 50V 20mA 150mW Automotive 3-Pin SC-75 T/R
1514158138521674pdta115e_series.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Technische Details PDTA115EE,115

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Supplier Device Package: SC-75, Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Power - Max: 150mW, Current - Collector Cutoff (Max): 1µA, Packaging: Bulk, Manufacturer: Rochester Electronics, LLC, Base Part Number: PDTA11, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Resistor - Emitter Base (R2): 100 kOhms, Resistor - Base (R1): 100 kOhms, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 20mA, Part Status: Obsolete, Transistor Type: PNP - Pre-Biased.

Preis PDTA115EE,115 ab 0 EUR bis 0 EUR

PDTA115EE,115
Hersteller:
PDTA115EE TRANS PNP W/RES 50V SOT-416
PDTA115E_SERIES.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA115EE,115
PDTA115EE,115
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Supplier Device Package: SC-75
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Current - Collector Cutoff (Max): 1µA
Packaging: Bulk
Manufacturer: Rochester Electronics, LLC
Base Part Number: PDTA11
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 20mA
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
PDTA115E_SERIES.pdf
auf Bestellung 96437 Stücke
Lieferzeit 21-28 Tag (e)
PDTA115EE,115
Hersteller: Rochester Electronics, LLC
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
PDTA115E_SERIES.pdf
auf Bestellung 96437 Stücke
Lieferzeit 21-28 Tag (e)
PDTA115EE,115
PDTA115EE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 150MW SC75
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
PDTA115E_SERIES.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA115EE,115
PDTA115EE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 150MW SC75
Packaging: Cut Tape (CT)
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
PDTA115E_SERIES.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen