PMCM650VNEZ NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 12V 6.4A 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V
auf Bestellung 474624 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 275+ | 2.62 EUR |
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Technische Details PMCM650VNEZ NXP USA Inc.
Description: MOSFET N-CH 12V 6.4A 6WLCSP, Packaging: Bulk, Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V, Power Dissipation (Max): 556mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-WLCSP (1.48x0.98), Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V.