Technische Details PMDT290UNEYL Nexperia
Description: MOSFET 2N-CH 20V 0.8A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-666, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMDT290UNEYL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| PMDT290UNEYL | Hersteller : NEXPERIA |
 20 V, 800 mA dual N-channel Trench MOSFET |
Produkt ist nicht verfügbar |
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PMDT290UNEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PMDT290UNEYL | Hersteller : Nexperia |
MOSFET NRND for Automotive Applications PMDT290UNE/SOT666/SOT6 |
Produkt ist nicht verfügbar |