PMDT290UNEYL Nexperia USA Inc.

Description: MOSFET 2N-CH 20V 0.8A SOT666, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Part Status: Not For New Designs, Supplier Device Package: SOT-666, Vgs(th) (Max) @ Id: 950mV @ 250µA, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).