PMH550UPEH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
auf Bestellung 15596 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
44+ | 0.6 EUR |
100+ | 0.3 EUR |
500+ | 0.25 EUR |
1000+ | 0.18 EUR |
2000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMH550UPEH Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.23W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V.
Weitere Produktangebote PMH550UPEH nach Preis ab 0.12 EUR bis 0.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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PMH550UPEH | Hersteller : Nexperia | MOSFET PMH550UPE/SOT8001/DFN0606-3 |
auf Bestellung 8326 Stücke: Lieferzeit 14-28 Tag (e) |
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PMH550UPEH | Hersteller : Nexperia | Trans MOSFET P-CH 20V 0.8A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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PMH550UPEH | Hersteller : Nexperia | Trans MOSFET P-CH 20V 0.8A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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PMH550UPEH | Hersteller : NEXPERIA | Trans MOSFET P-CH 20V 0.8A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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PMH550UPEH | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 800MA DFN0606-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.23W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V |
Produkt ist nicht verfügbar |