PMH550UPEH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
auf Bestellung 6713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 71+ | 0.25 EUR |
| 106+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
| 5000+ | 0.091 EUR |
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Technische Details PMH550UPEH Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.23W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V.
Weitere Produktangebote PMH550UPEH nach Preis ab 0.09 EUR bis 0.59 EUR
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PMH550UPEH | Hersteller : Nexperia |
MOSFETs SOT8001 P-CH 20V .8A |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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PMH550UPEH | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 0.8A 3-Pin DFN T/R |
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PMH550UPEH | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 0.8A 3-Pin DFN T/R |
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| PMH550UPEH | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 0.8A 3-Pin DFN T/R |
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PMH550UPEH | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 800MA DFN0606-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.23W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V |
Produkt ist nicht verfügbar |

