Produkte > NEXPERIA USA INC. > PMPB07R3VPX
PMPB07R3VPX

PMPB07R3VPX Nexperia USA Inc.


PMPB07R3VP.pdf Hersteller: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.44 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PMPB07R3VPX Nexperia USA Inc.

Description: PMPB07R3VP - 12 V, P-CHANNEL TRE, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020M-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V.

Weitere Produktangebote PMPB07R3VPX nach Preis ab 0.41 EUR bis 1.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMPB07R3VPX PMPB07R3VPX Hersteller : Nexperia USA Inc. PMPB07R3VP.pdf Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
auf Bestellung 4672 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.33 EUR
24+ 1.12 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
PMPB07R3VPX PMPB07R3VPX Hersteller : Nexperia PMPB07R3VP-2199690.pdf MOSFET PMPB07R3VP/SOT1220-2/DFN2020M-
auf Bestellung 103299 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
40+1.33 EUR
46+ 1.13 EUR
100+ 0.79 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
3000+ 0.42 EUR
9000+ 0.41 EUR
Mindestbestellmenge: 40