PMPB07R3VPX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details PMPB07R3VPX Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020M-6.
Weitere Produktangebote PMPB07R3VPX nach Preis ab 0.29 EUR bis 1.28 EUR
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PMPB07R3VPX | Hersteller : Nexperia |
MOSFETs SOT1220 P CHAN 12V |
auf Bestellung 86965 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB07R3VPX | Hersteller : Nexperia USA Inc. |
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
auf Bestellung 4160 Stücke: Lieferzeit 10-14 Tag (e) |
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