PMPB33XN,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 4.3A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
auf Bestellung 2830 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.96 EUR |
| 35+ | 0.74 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.28 EUR |
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Technische Details PMPB33XN,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.3A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V, Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V.
Weitere Produktangebote PMPB33XN,115 nach Preis ab 0.22 EUR bis 0.97 EUR
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PMPB33XN,115 | Hersteller : Nexperia |
MOSFET PMPB33XN/SOT1220/SOT1220 |
auf Bestellung 6720 Stücke: Lieferzeit 14-28 Tag (e) |
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PMPB33XN,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 4.3A 6-Pin DFN-MD EP T/R |
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PMPB33XN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.3A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V |
Produkt ist nicht verfügbar |