auf Bestellung 6720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.16 EUR |
| 24000+ | 0.15 EUR |
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Technische Details PMPB33XN,115 Nexperia
Description: MOSFET N-CH 30V 4.3A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V, Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V.
Weitere Produktangebote PMPB33XN,115 nach Preis ab 0.19 EUR bis 0.65 EUR
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PMPB33XN,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 4.3A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V |
auf Bestellung 2830 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB33XN,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 4.3A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB33XN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.3A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V |
Produkt ist nicht verfügbar |