PMV50XNEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMV50XNEA - 30 V, N-CHANNEL TREN
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V
Power Dissipation (Max): 590mW (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V
Qualification: AEC-Q101
Description: PMV50XNEA - 30 V, N-CHANNEL TREN
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V
Power Dissipation (Max): 590mW (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
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Technische Details PMV50XNEAR Nexperia USA Inc.
Description: PMV50XNEA - 30 V, N-CHANNEL TREN, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V, Power Dissipation (Max): 590mW (Ta), 5.6W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV50XNEAR nach Preis ab 0.2 EUR bis 0.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PMV50XNEAR | Hersteller : Nexperia | MOSFET PMV50XNEA/SOT23/TO-236AB |
auf Bestellung 26601 Stücke: Lieferzeit 14-28 Tag (e) |
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PMV50XNEAR | Hersteller : NEXPERIA | PMV50XNEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV50XNEAR | Hersteller : Nexperia USA Inc. |
Description: PMV50XNEA - 30 V, N-CHANNEL TREN Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V Power Dissipation (Max): 590mW (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |