PMV50XNEAR Nexperia USA Inc.


PMV50XNEA.pdf
Hersteller: Nexperia USA Inc.
Description: PMV50XNEA - 30 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 590mW (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMV50XNEAR Nexperia USA Inc.

Description: PMV50XNEA - 30 V, N-CHANNEL TREN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 590mW (Ta), 5.6W (Tc), Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote PMV50XNEAR nach Preis ab 0.16 EUR bis 0.63 EUR

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PMV50XNEAR PMV50XNEAR Nexperia USA Inc. PMV50XNEA.pdf Description: PMV50XNEA - 30 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 590mW (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 19054 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
39+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMV50XNEAR PMV50XNEA.pdf
Hersteller: Nexperia USA Inc.
Description: PMV50XNEA - 30 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 590mW (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.4A, 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 19054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.63 EUR
39+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH