PMXB120EPEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 2.4A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 400mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
Description: MOSFET P-CH 30V 2.4A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 400mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.17 EUR |
10000+ | 0.15 EUR |
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Technische Details PMXB120EPEZ Nexperia USA Inc.
Description: MOSFET P-CH 30V 2.4A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V, Power Dissipation (Max): 400mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V.
Weitere Produktangebote PMXB120EPEZ nach Preis ab 0.13 EUR bis 0.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PMXB120EPEZ | Hersteller : Nexperia | MOSFETs PMXB120EPE/SOT1215/DFN1010D-3 |
auf Bestellung 14321 Stücke: Lieferzeit 10-14 Tag (e) |
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PMXB120EPEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 2.4A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V Power Dissipation (Max): 400mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V |
auf Bestellung 29011 Stücke: Lieferzeit 10-14 Tag (e) |
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PMXB120EPEZ | Hersteller : NEXPERIA | Trans MOSFET P-CH 30V 2.4A 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PMXB120EPEZ | Hersteller : NEXPERIA | PMXB120EPEZ SMD P channel transistors |
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