auf Bestellung 14321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.25 EUR |
| 1000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| 10000+ | 0.13 EUR |
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Technische Details PMXB120EPEZ Nexperia
Description: MOSFET P-CH 30V 2.4A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V, Power Dissipation (Max): 400mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V.
Weitere Produktangebote PMXB120EPEZ nach Preis ab 0.38 EUR bis 0.97 EUR
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PMXB120EPEZ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 2.4A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V Power Dissipation (Max): 400mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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PMXB120EPEZ | Hersteller : NEXPERIA |
Trans MOSFET P-CH 30V 2.4A 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PMXB120EPEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 2.4A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V Power Dissipation (Max): 400mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V |
Produkt ist nicht verfügbar |