PMZB200UNEYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.15 EUR |
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Technische Details PMZB200UNEYL Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V.
Weitere Produktangebote PMZB200UNEYL nach Preis ab 0.084 EUR bis 1.01 EUR
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
auf Bestellung 8136 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
auf Bestellung 8136 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia |
MOSFET PMZB200UNE/SOT883B/XQFN3 |
auf Bestellung 37521 Stücke: Lieferzeit 14-28 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.4A DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
auf Bestellung 25920 Stücke: Lieferzeit 21-28 Tag (e) |
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| PMZB200UNEYL | Hersteller : NEXPERIA |
Description: NEXPERIA - PMZB200UNEYL - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 421580 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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| PMZB200UNEYL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 5A Case: DFN1006B-3; SOT883B Gate-source voltage: ±8V On-state resistance: 410mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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| PMZB200UNEYL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 5A Case: DFN1006B-3; SOT883B Gate-source voltage: ±8V On-state resistance: 410mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |