| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.12 EUR |
| 5000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMZB200UNEYL Nexperia
Description: MOSFET N-CH 30V 1.4A DFN1006B-3, Packaging: Tape & Reel (TR), Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote PMZB200UNEYL nach Preis ab 0.29 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMZB200UNEYL | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 1.4A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
auf Bestellung 5543 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMZB200UNEYL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
auf Bestellung 5543 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 39+ | 0.46 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.29 EUR |