auf Bestellung 8136 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 362+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMZB200UNEYL Nexperia
Description: MOSFET N-CH 30V 1.4A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V.
Weitere Produktangebote PMZB200UNEYL nach Preis ab 0.078 EUR bis 0.76 EUR
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PMZB200UNEYL | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
auf Bestellung 8136 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia |
MOSFETs 30 V, N-channel Trench MOSFET |
auf Bestellung 23966 Stücke: Lieferzeit 10-14 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.4A DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
auf Bestellung 7533 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZB200UNEYL | Hersteller : NEXPERIA |
Description: NEXPERIA - PMZB200UNEYL - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 421580 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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PMZB200UNEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.4A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
Produkt ist nicht verfügbar |